A comparison of the radiation hardness of various VLSI technologies for defense applications
Abstract
In this review the radiation hardness of various potential very large scale (VLSI) IC technologies is evaluated. IC scaling produces several countervailing trends. Reducing vertical dimensions tends to increase total dose hardness, while reducing lateral feature sizes may increase susceptibility to transient radiation effects. It is concluded that during the next decade at least, silicon complimentary MOS (CMOS), perhaps on an insulating substrate (SOI) will be the technology of choice for VLSI in defense systems.
- Publication:
-
In AGARD The Impact of Very High Performance Integrated Circuits on Radar
- Pub Date:
- August 1985
- Bibcode:
- 1985ivhp.agarR....G
- Keywords:
-
- Cosmic Rays;
- Integrated Circuits;
- Military Operations;
- Radiation Hardening;
- Very Large Scale Integration;
- Comparison;
- Ionizing Radiation;
- Neutrons;
- Radiation Effects;
- Electronics and Electrical Engineering