Influence of dangling bond defects on recombination in a-Si:H
Abstract
Time resolved photoinduced absorption (PIA) and steady state photoconductivity experiments (PC) are used to study recombination processes in electron-irradiated hydrogenated amorphous silicon (a-Si:H). Defect densities measured by ESR range from 5 x 10(15)/cm(3) to 10(18)/cm(3). It is found that while increasing the dangling bond density reduces the PC, the PIA decay rate increases. The results are discussed in the context of a recombination model where the defect density determines whether the carriers recombine through a fast bimolecular or a slower monomolecular process.
- Publication:
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Presented at the 11th International Conference on Amorphous Semiconductors
- Pub Date:
- June 1985
- Bibcode:
- 1985icas.confQ....D
- Keywords:
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- Amorphous Materials;
- Chemical Bonds;
- Crystal Defects;
- Recombination Reactions;
- Silanes;
- Absorption Spectra;
- Amorphous Silicon;
- Charge Carriers;
- Electron Irradiation;
- Photoconductivity;
- Solid-State Physics