Electrical resistivity in amorphous metals: Consequences of phonon ineffectiveness in the diffraction model
Abstract
Electrical transport in amorphous metals is analyzed in the context of the BaymFaberZiman theory. The theory is generalized to incorporate electron mean free path effects through the PippardZiman condition on the electronphonon interaction. A variety of model tmatrices are considered. The geometrical structure factors are modeled by PercusYevick hard sphere forms and a single branch Debye phonon spectrum is assumed. Detailed results for electrical resistivity rho vs. temperature T and the TCR are presented for extensive ranges of 2kF/kp and electron mean free path. The results, incorporating the PippardZiman condition, are consistent with the observed rho vs. T in low resistivity glassy metals. However, although inclusion of the PippardZiman condition dramatically improves agreement with the data, quantitative agreement is not obtained in high resistivity amorphous metals.
 Publication:

Final Technical Report Army Armament Research and Development Command
 Pub Date:
 January 1985
 Bibcode:
 1985army.reptR....M
 Keywords:

 Amorphous Materials;
 Computerized Simulation;
 Electrical Resistivity;
 Metals;
 Transport Properties;
 Backscattering;
 Diffraction;
 Electrons;
 Mean Free Path;
 Photons;
 Temperature;
 Electronics and Electrical Engineering