Hopping mobility in semiconductor superlattices
Abstract
We present results on the electrical transport perpendicular to interfaces in GaAs/Al xGa 1-xAs superlattices. We have measured the current-voltage characteristics on a series of superlattices. This has been simulated numerically, the superlattice being replaced by an effective medium. Using this model we obtain the values of the effective mobility as a function of the superlattice period. Our data are in good agreement with a theory of phonon-assisted hopping transport between localized states, rather than the theory of phonon-limited band transport of Bloch waves.
- Publication:
-
Superlattices and Microstructures
- Pub Date:
- 1985
- DOI:
- 10.1016/0749-6036(85)90031-X
- Bibcode:
- 1985SuMi....1...67P