Laser induced oxidation of heavily doped silicon
Abstract
We have investigated the incorporation of oxygen into heavily doped silicon during uv excimer laser irradiation. For the case of repetitive laser irradiations in air, the amount of oxygen incorporated into Si depends markedly on the dopant. For As and Sb implanted silicon, there is no anomalous oxygen incorporation. By contrast, increasing amounts of O are incorporated into In implanted silicon as a function of number of laser shots. The incorporation of O is associated with degradation of the optical and structural properties of the surface, and a deep diffusion of the dopant. This behavior is believed to be partly related to specific chemical reactions between oxygen and indium present in the surface at high concentrations as the result of dopant segregation during solidification.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- 1985
- Bibcode:
- 1985STIN...8630153F
- Keywords:
-
- Backscattering;
- Ion Implantation;
- Laser Annealing;
- Oxidation;
- Phase Transformations;
- Silicon;
- Excimer Lasers;
- Oxygen Spectra;
- Solidification;
- Ultraviolet Lasers;
- Lasers and Masers