Mobility transition in the two-dimensional electron gas in GaAsAlGaAs heterostructures
Abstract
Temperature dependence of the two-dimensional electron mobility (μ) in GaAsAlGaAs heterostructures, for 4.2K⪅ T⪅40K, shows a transition at μ∼1×10 5 cm 2 Vsec -1. This transition is demonstrated by a theoretical calculation to result from the interplay between screened impurity scattering and the acoustic phonon scattering. A systematic study of samples with μ>1×10 5 cm 2 Vsec -1 and a wide range of electron densities shows that a deformation potential E1 = 13.5 eV, as suggested by Price, is needed to explain all the data.
- Publication:
-
Solid State Communications
- Pub Date:
- October 1985
- DOI:
- 10.1016/0038-1098(85)91012-9
- Bibcode:
- 1985SSCom..56..287L
- Keywords:
-
- Aluminum Gallium Arsenides;
- Electron Gas;
- Electron Mobility;
- Heterojunction Devices;
- Temperature Dependence;
- Doped Crystals;
- Electrical Resistivity;
- Phonons;
- Solid-State Physics