Influence of technological factors on luminescence characteristics of InGaAsP/InP heterolasers (lambda = 1.55 microns)

The influence of lattice parameter mismatch and the thicknesses of the intermediate layer and active region on the threshold current density, differential quantum efficiency and quantum radiation yield characteristics of InGaAsP/InP double heterostructure lasers are investigated. The lasers were created by liquid phase epitaxy on substrates of n-InP;Sn with (100) orientation in a step cooling process. The use of intermediate layers to prevent acceptors from entering the active region made it possible to reduce the threshold current density at 1.5 micro m to approximately 1 kA/sq cm, and to achieve threshold current densities of 4 - 4.5 kA/sq cm.