Injected-hot-electron transport in GaAs
Abstract
Using the new experimental technique ``hot-electron spectroscopy'' we have, for the first time, observed electrons in extreme nonequilibrium. When the transit-region width is comparable with the calculated hot-electron mean free path, two peaks are observed in the measured spectrum. The high-energy peak corresponds to quasiballistic electrons suffering few, if any, collisions in the transit region. The low-energy peak is due to excitation of the Fermi sea by the injected hot electrons.
- Publication:
-
Physical Review Letters
- Pub Date:
- November 1985
- DOI:
- 10.1103/PhysRevLett.55.2071
- Bibcode:
- 1985PhRvL..55.2071L
- Keywords:
-
- Carrier Injection;
- Electron Spectroscopy;
- Gallium Arsenides;
- Hot Electrons;
- Inelastic Scattering;
- Molecular Beam Epitaxy;
- Born Approximation;
- Maxwell-Boltzmann Density Function;
- Solid-State Physics;
- 72.20.Jv;
- Charge carriers: generation recombination lifetime and trapping