7×7 reconstruction of Ge(111) surfaces under compressive strain
Abstract
We have discovered a correlation between lateral compressive strain in an elemental material and the reconstructed state of its surface. We studied continuous films of pure Ge epitaxially grown on Si(111) substrates. The in-plane lattice parameter varies continuously with film thickness while the surface symmetry changes from c2×8 to 7×7. The results indicate an important role of lateral compressive stress in the 7×7 reconstruction.
- Publication:
-
Physical Review Letters
- Pub Date:
- September 1985
- DOI:
- 10.1103/PhysRevLett.55.1106
- Bibcode:
- 1985PhRvL..55.1106G
- Keywords:
-
- Crystal Surfaces;
- Germanium;
- Molecular Beam Epitaxy;
- Semiconducting Films;
- Thin Films;
- Compressive Strength;
- Crystal Dislocations;
- Diffraction Patterns;
- Electron Diffraction;
- Film Thickness;
- Lattice Parameters;
- Solid-State Physics;
- 68.20.+t;
- 61.14.Hg;
- 61.80.Mk;
- 68.55.+b;
- Low-energy electron diffraction and reflection high-energy electron diffraction