Gallium Arsenide structures and interfaces formed by molecular beam epitaxy
Abstract
Sb-GaAs Schottky barrier diodes on n and p clean substrates were prepared by in situ metal deposition in a molecular beam epitaxy (MBE) system. Reduction of effective barrier heights on substrates with higher doping concentrations is in agreement with theoretical predictions. Thermal annealing up to 250 C shows changes in barrier heights that depend on whether the original surface was As or Ga rich. The barrier heights of thick Ga layers on n- and p-type (100) GaAs surfaces are 1.0 eV and 0.44 eV, respectively. The lective epitaxy of GaAs through windows in SiO2 deposited on semi-insulating GaAs substrates was also studied. The epitaxial growth of GaAs sub y Sb sub 1-y (y is equal to or greater than 7) on GaAs for study of the interface region was examined. This facilitates the compositional control in the MBE growth of GaAs (sub y) Sb (sub 1-y) film by adjusting the atomic flux ratio of Sb to Ga with extra arsenic flux supplied for maintaining stoichiometry.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- December 1985
- Bibcode:
- 1985PhDT........44C
- Keywords:
-
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Semiconductors (Materials);
- Voids;
- Energy Gaps (Solid State);
- Interface Stability;
- Schottky Diodes;
- Stoichiometry;
- Substrates;
- Electronics and Electrical Engineering