Design and fabrication of monolithic broadband microwave GaAs low noise FET amplifiers
Abstract
The design of a broadband low noise FET amplifier is a complicated process since it requires achieving both flat gain and a low noise figure over the desired octave frequency band. Difficulties also occur in the realization of these designs due to limitations in fabrication techniques. This thesis reports the development of a practical design, characterization, and fabrication of a practically realized broadband low noise FET amplifier via MIC and MMIC techniques. The approach employed the use of commercially available design programs for circuit designs based on fabrication limitations and characterization data, and the use of newly developed fabrication techniques to realize these designs consistently.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- December 1985
- Bibcode:
- 1985PhDT........18H
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Amplification;
- Broadband Amplifiers;
- Fabrication;
- Gates (Circuits);
- Logic Design;
- Microwaves;
- Electronics and Electrical Engineering