Effect of technological treatments on the quality and radiation resistance of the bases of Si solar cells
Abstract
The effects of processing techniques on the degradation and resistance to 1-MeV electron irradiation of Si solar-cell base material are investigated experimentally. Transient photoconductivity measurements are used to estimate carrier lifetime and surface recombination velocities in cells, using both floating-zone and Czochralski substrates and subjected to various treatments. The results are presented in tables and graphs, and it is found that annealing at 400-450 C can heal defects introduced by low-temperature processing, that oxygenation can correct defects introduced by high-temperature (800-1100-C) processing only in materials with low initial oxygen content, and that bulk hydrogenation with H(+) ions from a Kaufman source can heal both simple and tempering defects, improving both the initial electrical properties and the radiation resistance of the cells.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1985
- Bibcode:
- 1985PhDT.........5R
- Keywords:
-
- Carrier Lifetime;
- Electron Irradiation;
- Energy Technology;
- Photoelectric Cells;
- Radiation Tolerance;
- Silicon;
- Solar Cells;
- Excitation;
- Heat Treatment;
- Hydrogenation;
- Minority Carriers;
- Oxidation;
- P-Type Semiconductors;
- Photoconductivity;
- Pulsed Radiation;
- Recombination Reactions;
- Substrates;
- Temperature Effects;
- Solid-State Physics