Gallium arsenide photocathode with an integral sensitivity of 3200 micro-A/lm

Experimental results indicate that GaAs structures synthesized by liquid-phase epitaxy (LPE) and used as the basis for photocathodes operating in a reflection arrangement are of sufficiently high quality for the fabrication of negative-electron-affinity photocathodes with a sensitivity close to the theoretical limit. The integral sensitivity of the photocathodes in an ultrahigh-vacuum chamber attained 2600-3200 micro-A/lm.