GaAs FET modules serve 14-GHz band
Abstract
Satellite communications at 14 GHz has had a great effect on the development of power transistors and amplifiers during the last few years. One transistor series has now been employed to form the three gain stages of two linear power amplifier modules, models MC-5864 and MC-5865. In the MC-5864, three gain stages are constructed around an NE900100 transistor and two NE900000 transistors. The MC-5864 and MC-5865 GaAs FET power amplifier modules are housed in a compact eight-pin microstrip package which has been matched to 50 ohms at input and output pins. Both amplifier modules have a range from 14.0 to 14.5 GHz, and a linear gain of 22 dB. Attention is given to the use of the modules on 50-ohm microstrip lines on flexible substrates.
- Publication:
-
Microwaves
- Pub Date:
- July 1985
- Bibcode:
- 1985MicWa..24..151S
- Keywords:
-
- Electronic Modules;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Power Amplifiers;
- Transistor Amplifiers;
- Astrionics;
- Electronic Packaging;
- Microstrip Transmission Lines;
- Narrowband;
- Waveguides;
- Electronics and Electrical Engineering