A microwave GaAs FET power module with GaAs matching circuits - The M-FET (matched field effect transistor)
Abstract
A design approach for configuring microwave amplifier modules with GaAs circuit substrates is described. GaAs FET chips are used as active elements, with the input and output matching and bias circuits mounted on the GaAs chips. Lumped, matching and hybrid elements can be employed with the M-FETs, which have vertical integration. The features of a 6 GHz-FET with a 1 dB bandwidth are employed to illustrate the M-FET design and performance. Losses are noted to be a minimum at 0.1 dB with a 250 micron thick substrate in order to retain low impedance circuit elements. An eight-step process is used to manufacture the matching circuits. Trial results with an experimental M-FET are reported, demonstrating a 6.3 W output and 9 dB gain at a 550 MHz band.
- Publication:
-
Microwave Journal
- Pub Date:
- May 1985
- Bibcode:
- 1985MiJo...28..205M
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Impedance Matching;
- Microwave Amplifiers;
- Power Amplifiers;
- Electronic Modules;
- Frequency Response;
- Integrated Circuits;
- Power Gain;
- Transistor Amplifiers;
- Electronics and Electrical Engineering