Structural defects in the epitaxial layers of semiconductors
Abstract
The origin and general characteristics of defects in homoepitaxial and heteroepitaxial structures are examined with particular reference to III-V compounds. Attention is given to dislocations, stacking faults, twinning defects, and ways of producing epitaxial structures with a higher degree of perfection, including the synthesis of isoperiodic heterostructures based on multicomponent solid solutions of semiconductor compounds. The effect of defects on the performance of semiconductor devices and instruments is demonstrated using the performance degradation of injection lasers and light-emitting diodes as an example.
- Publication:
-
Moscow Izdatel Metallurgiia
- Pub Date:
- 1985
- Bibcode:
- 1985MIzMe.........M
- Keywords:
-
- Crystal Defects;
- Epitaxy;
- Semiconducting Films;
- Semiconductors (Materials);
- Crystal Dislocations;
- Gallium Compounds;
- Injection Lasers;
- Light Emitting Diodes;
- Mechanical Twinning;
- Point Defects;
- Semiconductor Devices;
- Silicon Transistors;
- Solid Solutions;
- Substrates;
- Electronics and Electrical Engineering