Surface transport of electrons and holes in semiconductors

The book is concerned with effects associated with changes in the surface transport of charge carriers due to electrostatic interaction between the various components of the MOS structure and surface recombination of nonequilibrium charge carriers in a semiconductor placed in crossed electric and magnetic fields. In particular, attention is given to the phenomenological theory of the Hall effect and magnetoresistance, which is used in surface studies by Hall methods. The discussion also covers the principal mechanisms of charge carrier scattering by a surface, the behavior of a two-dimensional charge-carrier gas, the behavior of surface excitons, and characteristics of surface charge regions under conditions of low charge carrier density.