A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
Abstract
A new functional, resonant-tunneling hot electron transistor (RHET) is demonstrated in which electrons are injected from emitter to base by resonant-tunneling through a quantum well, and are near-ballistically transferred to a collector. The main feature of this device is a peaked collector-current characteristic with respect to the base-emitter voltage. This enables us to build a frequency multiplier or an Exclusive-NOR gate using only one transistor.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- November 1985
- DOI:
- 10.1143/JJAP.24.L853
- Bibcode:
- 1985JaJAP..24L.853Y
- Keywords:
-
- Electron Tunneling;
- Hot Electrons;
- Junction Transistors;
- Resonant Tunneling;
- Semiconductor Devices;
- Aluminum Gallium Arsenides;
- Electric Potential;
- Gates (Circuits);
- N-Type Semiconductors;
- Quantum Wells;
- Electronics and Electrical Engineering