Visible-Light Injection-Electroluminescent a-SiC/p-i-n Diode
Abstract
A new type of visible-light injection-electroluminescent a-SiC diode has been developed. The LED has the structure of p a-SiC/i a-SiC/n a-SiC. Visible white-green, yellowish-orange and red light emissions have been observed for the first time in these junctions at room temperature. It is demonstrated that emitting color can be controlled by choosing the optical band gap of the luminescent active i a-SiC layer. The brightness of the yellowish-orange emission was 0.13 cd/m2 with a forward injection current density of 200 mA/cm2 for 0.033 cm2 cell area.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- October 1985
- DOI:
- Bibcode:
- 1985JaJAP..24L.806K
- Keywords:
-
- Electroluminescence;
- Junction Diodes;
- Light Emission;
- P-I-N Junctions;
- Silicon Carbides;
- Visible Spectrum;
- Amorphous Semiconductors;
- Electro-Optics;
- Light Emitting Diodes;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering