High mobility GaInAs thin layers grown by molecular beam epitaxy
Abstract
Thin (0.5-micron) GaInAs layers are grown by molecular-beam epitaxy on InP substrates with and without AlInAs buffer layers. The best electron mobilities of the layer grown without the buffer are 9700 sq cm/V/s at room temperature and 55,500 sq cm/V/s at 77 K in the dark. The highest mobility of the layer is 61,000 sq cm/V/s at 60 K. Electron mobilities of the layer with buffer are as high as 11,900 sq cm/V/s at room temperature and 53,800 sq cm/V/s at 77 K in the dark, while 64,400 sq cm/V/s is measured at 77 K under an illumination condition.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- February 1985
- Bibcode:
- 1985JaJAP..24L..19M
- Keywords:
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- Crystal Growth;
- Gallium Arsenides;
- Indium Arsenides;
- Molecular Beam Epitaxy;
- Thin Films;
- Carrier Mobility;
- Conduction Bands;
- Hall Effect;
- Liquid Phase Epitaxy;
- Substrates;
- Solid-State Physics