Forward bias electroluminescence from phthalocyanine Langmuir-Blodgett film/ZnSeS MIS diodes
Abstract
The electroluminescent properties of Au/phthalocyanine Langmuir-Blodgett film/ZnSeS diodes in forward bias are reported. The Langmuir-Blodgett film produces a substantial increase in the electroluminescent intensity. Maximum light output occurs at a wavelength 580 nm. The El light intensity versus current density characteristic indicates that the presence of the organic layer produces enhanced minority carrier injection.
- Publication:
-
Journal of Molecular Electronics
- Pub Date:
- December 1985
- Bibcode:
- 1985JMoEl...1...93F
- Keywords:
-
- Electroluminescence;
- Mis (Semiconductors);
- Organic Semiconductors;
- Phthalocyanin;
- Semiconducting Films;
- Zinc Selenides;
- Bias;
- Current Density;
- Diodes;
- Light (Visible Radiation);
- Luminous Intensity;
- Zinc Sulfides;
- Electronics and Electrical Engineering