Photoluminescence of GaAs-AlGaAs quantum wells grown by molecular-beam epitaxy

A study is made of the photoluminescence of periodic structures with alternating layers of GaAs and Al0.3Ga0.7As grown by molecular-beam epitaxy, with the GaAs layer thickness ranging from 7.5 to 12 nm and with a total number of periods equal to 100. It is noted that the integral intensity of the photoluminescence of the quantum wells at 1.6 is a linear function of the excitation density over a wide range of pumping conditions. This indicates that the role of nonradiative recombination is insignificant and that luminescence in quantum wells structures is highly efficient.