Neutron Irradiation as a Means of Reducing the Incidence of Radiation Induced Breakdown in a Radiation Hard Power MOSFET
Abstract
The problem of transient gamma induced "second breakdown" in a specially developed radiation hard power MOSFET is discussed, and results of experiments in which neutron irradiation was used to control minority carrier lifetime are presented. The technique is only partially successful at reducing susceptibility to second breakdown.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1985
- DOI:
- Bibcode:
- 1985ITNS...32.3961J
- Keywords:
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- Electrical Faults;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Neutron Irradiation;
- Radiation Hardening;
- Carrier Lifetime;
- Dosimeters;
- Electric Current;
- Electrical Resistance;
- Waveforms;
- Electronics and Electrical Engineering