Hole Removal in Thin-Gate MOSFETs by Tunneling
Abstract
Fast time-resolved measurements of the response of thin-oxide MOSFETs show that radiation-induced holes are removed from the gate oxide by a tunneling process. A tunneling rate of 0.35 nm/decade from each interface is found for SiO2 at 77 K. Fast time-resolved measurements performed at room temperature are in qualitative agreement with low-temperature annealing data. Uncertainties in the room-temperature data did not allow extraction of firm and reliable values for the tunneling parameters.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1985
- DOI:
- Bibcode:
- 1985ITNS...32.3916B
- Keywords:
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- Electron Tunneling;
- Field Effect Transistors;
- Gates (Circuits);
- Holes (Electron Deficiencies);
- Metal Oxide Semiconductors;
- Radiation Effects;
- Silicon Dioxide;
- Solid-Solid Interfaces;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering