Millimetre wavelength detection using Nb/NbO(x)/Pb alloy tunnel junctions
Abstract
In the present investigation, it is shown that the reactive ion beam oxidation technique makes it possible to fabricate high quality niobium edge tunnel junctions. The procedure for edge junction formation considered is virtually identical to the approach described by Kleinsasser and Buhrman (1980). The procedure involves the deposition of an 80-200 nm Nb layer onto a heated quartz substrate maintained at a temperature of 500 C. Other fabrication steps include Ar ion beam patterning of the Nb base electrode, the use of a reactive ion beam (RIB) deposition method, and ion beam etching. Attention is also given to choke structure and mixer block design, and experimental results.
- Publication:
-
IEEE Transactions on Magnetics
- Pub Date:
- March 1985
- DOI:
- 10.1109/TMAG.1985.1063696
- Bibcode:
- 1985ITM....21..903N
- Keywords:
-
- Josephson Junctions;
- Microwave Sensors;
- Millimeter Waves;
- Niobium Alloys;
- Radiation Detectors;
- Thin Films;
- Fabrication;
- Insulators;
- Ion Beams;
- Lead Alloys;
- Mixing Circuits;
- Niobium Oxides;
- Superconductors;
- Vacuum Deposition;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering