Gap suppression devices
Abstract
This paper discusses some general features of three terminal superconducting devices which operate on the basis of superconducting energy gap suppression by quasiparticle injection. These features include latching behavior at greater than unity power gain and, in the conventional three layer sandwich geometry, a rather long device switching time. Three terminal gap suppression experiments carried out with the use of a double edge junction geometry are then described. The problems of obtaining large gain in this higher speed geometry are discussed. Finally, it is pointed out that these problems are alleviated by using the gap suppression effect to switch a supercurrent biased junction rather than to modify the quasiparticle I-V curve.
- Publication:
-
IEEE Transactions on Magnetics
- Pub Date:
- March 1985
- DOI:
- 10.1109/TMAG.1985.1063735
- Bibcode:
- 1985ITM....21..717H
- Keywords:
-
- Energy Gaps (Solid State);
- Josephson Junctions;
- Superconductors;
- Thin Films;
- Volt-Ampere Characteristics;
- Bismuth Compounds;
- Electron Tunneling;
- Lead Compounds;
- Niobium;
- Time Response;
- Electronics and Electrical Engineering