Tunneling and interface structure of oxidized metal barriers on A15 superconductors
Abstract
A15-based tunnel junctions have been prepared with barriers of oxidized Al, Si, and Y. Properties of the superconductor/barrier interface which are crucial for low-leakage junctions were established by correlating XPS spectra of oxidized bilayers and RHEED patterns of the surface of each layer with tunneling characteristics. Comparisons were made between oxidized Al barrier properties for Nb and Nb3Sn base electrodes. Some differences between evaporated and dc magnetron sputtered barriers have emerged.
- Publication:
-
IEEE Transactions on Magnetics
- Pub Date:
- March 1985
- DOI:
- 10.1109/TMAG.1985.1063720
- Bibcode:
- 1985ITM....21..521T
- Keywords:
-
- Aluminum Oxides;
- Electron Tunneling;
- Mbm Junctions;
- Oxide Films;
- Solid-Solid Interfaces;
- Superconductors;
- Atomic Structure;
- Barrier Layers;
- Magnetron Sputtering;
- Niobium Alloys;
- Photoelectron Spectroscopy;
- Solid Electrodes;
- Vacuum Deposition;
- Volt-Ampere Characteristics;
- Yttrium Oxides;
- Solid-State Physics