FET characterization using gated-TLM structure
Abstract
A new FET characterization structure consisting of parallel ohmic contacts with gates of varying lengths in between is described. The FET source resistance is accurately measured without parameter fitting or iteration. The low-field electron mobility beneath the gate is determined as an effective uniform value and as a function of distance into the channel without iteration. The use of this structure is demonstrated on self-aligned ion-implanted GaAs MESFET's.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- December 1985
- DOI:
- 10.1109/T-ED.1985.22422
- Bibcode:
- 1985ITED...32.2824B
- Keywords:
-
- Electrical Measurement;
- Electrical Resistance;
- Electron Mobility;
- Field Effect Transistors;
- Gates (Circuits);
- Transmission Lines;
- Electric Contacts;
- Gallium Arsenides;
- Ion Implantation;
- Electronics and Electrical Engineering