Calculation of channeling effects during ion implantation using the Boltzmann transport equation
Abstract
The Boltzmann transport equation approach for ion implantation simulation has been enhanced to allow the calculation of channeling effects. Simple models are used for scattering into channeling directions and for motion along channels in order to obtain useful results without requiring excessive amounts of computation time. Comparison with experimental profiles show good agreement for boron implantation into 100 and 111 line silicon based on experimental values for electronic stopping powers. Where stopping data are not available, parameters can be adjusted to fit the experimental profiles.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1985
- DOI:
- 10.1109/T-ED.1985.22223
- Bibcode:
- 1985ITED...32.1918G
- Keywords:
-
- Boltzmann Transport Equation;
- Charge Transfer;
- Ion Implantation;
- Very Large Scale Integration;
- Boron;
- Monte Carlo Method;
- Silicon;
- Substrates;
- Solid-State Physics