The DSI diode - A fast large-area optoelectronic detector
Abstract
Fast double-Schottky-interdigitated diodes have been fabricated by evaporating Al-Schottky contacts on lowly doped n-GaAs (n = 10 to the 14th per cu cm). These detectors have a relatively large light-sensitive area of 400 square microns. Rise and fall times are in the order of 10 ps. The external quantum efficiency is 25 percent at lambda = 820 nm. The frequency response of the diodes is essentially flat up to 18 GHz, which is the limit of the measuring equipment.
- Publication:
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IEEE Transactions on Electron Devices
- Pub Date:
- June 1985
- DOI:
- Bibcode:
- 1985ITED...32.1034R
- Keywords:
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- Electro-Optics;
- Interdigital Transducers;
- Photonics;
- Schottky Diodes;
- Frequency Response;
- Gallium Arsenides;
- Pulsed Lasers;
- Quantum Efficiency;
- Semiconductor Lasers;
- Electronics and Electrical Engineering