Hot-electron-induced MOSFET degradation - Model, monitor, and improvement

After discussing a general model of hot electron effects which includes device degradation and the simple and close correlations between the different effects, attention is given to the symptoms and the time-dependence of device degradation, and to such problematic aspects as the importance of interface states versus electron trapping and hot electrons versus hot holes. A physical model of device degradation is proposed as an explanation of these symptoms and dynamics. The maximum channel electric field is related to all device parameters and bias voltages. A very simple means of characterizing I(sub), which serves as a monitor of all other hot electron effects, is introduced, and the prospects for suppressing maximum channel electric field are discussed.