Thermal nitridation of Si and SiO2 for VLSI
Abstract
Experimental investigations of the thermal nitridation of Si and SiO2 have led to the thermal growing of high quality, ultrathin films of silicon nitride and nitroxide in the ammonia atmosphere of a cold wall RF-heated reactor, and in a lamp-heated system. In the nitroxide's case, Ni-rich layers are formed at the surface and interface at a very early stage of the nitridation; results also point to the formation of an O-rich layer at the interface, beneath the Ni-rich layer, whose thickness increases slowly with nitridation time. MIS devices were fabricated which use these films as gate insulators; they have been electrically characterized and found to show that very thin thermal silicon nitride and nitroxide films can be used as gate dielectrics for future, highly scaled-down VLSI devices with superior reliability.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1985
- DOI:
- 10.1109/T-ED.1985.21920
- Bibcode:
- 1985ITED...32..106M
- Keywords:
-
- Mis (Semiconductors);
- Nitration;
- Semiconductors (Materials);
- Silicon;
- Silicon Dioxide;
- Very Large Scale Integration;
- Ammonia;
- Auger Spectroscopy;
- Capacitance-Voltage Characteristics;
- N-Type Semiconductors;
- P-Type Semiconductors;
- Radio Frequency Heating;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering