Optoelectronic integrated device with light amplification and optical bistability
Abstract
With the use of InP compound and InGaAsP alloy semiconductors, integrated devices have been fabricated in which a double heterojunction light-emitting diode is integrated onto the collector portion of a heterojunction phototransistor. The following results have been achieved in experiments with 1.15 micron wavelength light. The device amplifes the light. The maximum gain was 11.2 and the maximum differential was 31. The device is optically bistable. The optical bistability with positive gain was operated with at most 40-microwatt input light. The device exhibits a function similar to a light-activated thyristor and possesses a light unidirectional function. The unidirectionality measured was 16.5 dB.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 1985
- Bibcode:
- 1985ITED...31..805S
- Keywords:
-
- Electro-Optics;
- Heterojunction Devices;
- Indium Phosphides;
- Integrated Optics;
- Light Amplifiers;
- Optical Bistability;
- Fabrication;
- Gallium Arsenides;
- High Gain;
- Light Emitting Diodes;
- Phototransistors;
- Switching;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering