Auger effect in GaSb quantum well lasers
Abstract
The Auger recombination effect in GaSb quantum well lasers is discussed. A formula for the calculation of the CHSH Auger rate in quantum well structures is presented, which can be applied to the material where the bandgap is almost the same as the split-off gap. Using this formula, the quantum efficiency of the GaSb quantum well laser is calculated and compared to those of conventional double heterostructure lasers. It is found that the quantum efficiency of the GaSb quantum well laser can be improved to values higher than 50 percent in the wavelength range of 1.5-1.8 microns.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- December 1985
- DOI:
- 10.1109/JQE.1985.1072604
- Bibcode:
- 1985IJQE...21.1851S
- Keywords:
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- Auger Effect;
- Gallium Antimonides;
- Quantum Wells;
- Semiconductor Lasers;
- Energy Gaps (Solid State);
- Quantum Efficiency;
- Lasers and Masers