Ultra-high speed semiconductor lasers
Abstract
Recent research efforts which have led to the development of advanced laser structures possessing a direct modulation bandwidth of beyond 10 GHz under reliable room temperature continuous operation is described. Theoretical considerations on the relevant physical parameter are addressed, and experimental results on bandwidth modulation in short-cavity lasers and direct amplitude modulation in low-temperature operation are discussed. High-photon density devices and parasitic elements limitation are addressed, and mechanisms for bandwidth enhancement are considered. Intermodulation products, intensity noise, and superluminescent damping are discussed.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- February 1985
- DOI:
- 10.1109/JQE.1985.1072624
- Bibcode:
- 1985IJQE...21..121L
- Keywords:
-
- Broadband;
- Gallium Arsenides;
- Heterojunction Devices;
- Light Modulation;
- Semiconductor Lasers;
- Ultrashort Pulsed Lasers;
- Aluminum Gallium Arsenides;
- Frequency Response;
- High Speed;
- Injection Lasers;
- Intermodulation;
- Laser Cavities;
- Lasing;
- Threshold Currents;
- Lasers and Masers