Low frequency characteristics of a quasioptical schottky diode detector. Part III: Higher order theory
Abstract
A higher order theoretical model is presented to describe the behaviour of FIR point contact Schottky diodes for high signal levels and/or high bias currents. This model includes non-linear perturbation on the voltage induced at the Schottky junction. Its fit to experimental results in case of envelope detection is also discussed and compared to the fit determined with our previous non-perturbation theory.
- Publication:
-
International Journal of Infrared and Millimeter Waves
- Pub Date:
- December 1985
- DOI:
- Bibcode:
- 1985IJIMW...6.1203W
- Keywords:
-
- Infrared Detectors;
- Low Frequencies;
- Schottky Diodes;
- Submillimeter Waves;
- Bias;
- Capacitance;
- Electric Current;
- Far Infrared Radiation;
- Electronics and Electrical Engineering;
- FIT detectors theory;
- Point contact Schottky diode;
- Submillimetric detection