A seeded-channel silicon-on-insulator (SOI) MOS technology
Abstract
An improved silicon-on-insulator (SOI) MOSFET transistor structure is presented. The structure retains the density and low-capacitance advantages of SOI, but places the transistor channel region in the single-crystal silicon substrate. This 'seeded-channel' configuration avoids floating-body effets and ensures that defects in the SOI will not affect the channel mobility. The technology has been used to successfully fabricate n-channel transistors.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 1985
- DOI:
- 10.1109/EDL.1985.26268
- Bibcode:
- 1985IEDL....6..668B
- Keywords:
-
- Capacitance-Voltage Characteristics;
- Cmos;
- Metal Oxide Semiconductors;
- N-Type Semiconductors;
- Recrystallization;
- Silicon Transistors;
- Carrier Mobility;
- High Speed;
- Laser Applications;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering