High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
Abstract
Pseudomorphic In0.15Ga0.85As/A10.15Ga0.85As modulation-doped field effect transistors (MODFET's) exhibiting extremely good dc characteristics have been successfully fabricated. dc transconductance in these strained-layer structures of 270 mS/mm was measured for 1-micron gate, normally-on devices at 300 K. Maximum drain current levels are 290 mA/mm, with excellent pinch-off and saturation characteristics. The transconductance increased to 360 mS/mm at 77 K while no persistent photoconductivity or drain collapse was observed. Preliminary microwave results indicate a 300-K current gain cutoff frequency of about 20 GHz. These results are equivalent to the best GaAs/AlGaAs MODFET results and are due in part to the improved transport properties and carrier confinement in the InGaAs quantum well.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 1985
- DOI:
- 10.1109/EDL.1985.26255
- Bibcode:
- 1985IEDL....6..628K
- Keywords:
-
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Heterojunctions;
- Indium Arsenides;
- Transport Properties;
- Volt-Ampere Characteristics;
- Electron Gas;
- Molecular Beam Epitaxy;
- Quantum Wells;
- Electronics and Electrical Engineering