Backgating characteristics of MODFET structures
Abstract
Significant backgating in mesa-isolated AlGaAs/GaAs MODFET structures is reported. Results are presented on the influence of backgate potential on the electrical characteristics of enhancement-mode MODFET's fabricated on MBE grown material. An observed zero threshold voltage for the onset of backgating is attributed to a high level of current leakage in the high-purity GaAs buffer layer. Transconductance and capacitance-voltage measurements on MODFET's show that the backgate potential influences primarily the electrical properties of the two-dimensional electron gas channel and the adjacent AlGaAs layer.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- October 1985
- DOI:
- 10.1109/EDL.1985.26206
- Bibcode:
- 1985IEDL....6..494E
- Keywords:
-
- Aluminum Gallium Arsenides;
- Capacitance-Voltage Characteristics;
- Doped Crystals;
- Electrical Properties;
- Field Effect Transistors;
- Electric Potential;
- Gallium Arsenides;
- Leakage;
- Schottky Diodes;
- Threshold Voltage;
- Electronics and Electrical Engineering