Surface superlattice formation in silicon inversion layers using 0.2-micron period grating-gate electrodes

Transport has been studied in n-channel metal-oxide-semiconductor field-effect transistors in which a 0.2-micron period tungsten grating, with lines perpendicular to the current flow, was incorporated into the gate. This gate structure, which was fabricated using X-ray lithography and lift-off, produces a controllable periodic modulation of the inversion electron distribution. Low-temperature conductance measurements reveal reproducible structure which is consistent with the formation of a surface superlattice in the inversion layer.