A new gate structure vertical-GaAs FET
Abstract
A new vertical-(V-) GaAs FET exhibiting penthode-like characteristics has been developed and realized experimentally by combining reactive ion etching (RIE) and MO-CVD techniques. The unique feature of this device is the use of an insulator/metal-insulator-grating gate embedded in a GaAs single crystal. A comparison of the dc characteristics of the new device with a standard permeable base transistor (PBT) has been carried out. The improved device performance expected from this structure is discussed in detail.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1985
- DOI:
- 10.1109/EDL.1985.26120
- Bibcode:
- 1985IEDL....6..264A
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- Volt-Ampere Characteristics;
- Capacitance;
- Crystal Defects;
- Etching;
- Silicon Dioxide;
- Substrates;
- Thin Films;
- Tungsten;
- Vapor Deposition;
- Electronics and Electrical Engineering