Analysis of insulated gate transistor turn-off characteristics
Abstract
A model based upon a MOSFET driving a wide-base p-n-p transistor is presented for analysis of the turn-off behavior of n-channel insulated gate transistors. This model is found to provide a very good quantitative explanation of the shape of the collector current waveform during turn-off. Verification was accomplished using insulated gate transistors (IGT's) fabricated with two voltage ratings and a variety of radiation doses. This analysis allows the separation of the channel (electron) and minority carrier (hole) current flow in the IGT for the first time.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- February 1985
- DOI:
- 10.1109/EDL.1985.26048
- Bibcode:
- 1985IEDL....6...74B
- Keywords:
-
- Electric Current;
- Electron Irradiation;
- Field Effect Transistors;
- P-N-P Junctions;
- Volt-Ampere Characteristics;
- Epitaxy;
- N-Type Semiconductors;
- Permittivity;
- Steady State;
- Electronics and Electrical Engineering