HEMT 60 GHz amplifier
Abstract
A high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance. The letter describes the materials and device processing technology developed for fabricating these devices.
- Publication:
-
Electronics Letters
- Pub Date:
- October 1985
- DOI:
- 10.1049/el:19850729
- Bibcode:
- 1985ElL....21.1028B
- Keywords:
-
- High Electron Mobility Transistors;
- Integrated Circuits;
- Microwave Amplifiers;
- Microwave Circuits;
- Power Gain;
- Volt-Ampere Characteristics;
- Gallium Arsenides;
- Microelectronics;
- Millimeter Waves;
- Electronics and Electrical Engineering