High-power pulsed beam-lead IMPATT diodes for millimetre waves
Abstract
IMPATT diodes with technologically intergrated beam-leads were fabricated. Since no diode bonding is required, a total diode thickness of less than 2 microns can be realized reproducibly. With optimum device packages, peak pulse output powers of more than 10 W at 70 GHz have been achieved from silicon single-drift IMPATT diodes.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1985
- DOI:
- Bibcode:
- 1985ElL....21..913P
- Keywords:
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- Avalanche Diodes;
- Beam Leads;
- Microwave Equipment;
- Millimeter Waves;
- Miniature Electronic Equipment;
- Pulsed Radiation;
- Electronic Packaging;
- Fabrication;
- Integrated Circuits;
- Silicon Films;
- Electronics and Electrical Engineering