Au/TiN/WSi-gate self-aligned GaAs MESFETs using rapid thermal annealing method
Abstract
Au/TiN/WSi-gate self-aligned GaAs MESFETs with ion-implanted n(+) layers have been fabricated to reduce the gate resistance. It is shown that 100 nm thick TiN acts as a good barrier metal between Au and WSi during rapid thermal annealing for 6 s at 900 C. The technique is found to be effective in reducing the gate resistance, as well as simplifying the fabrication process. The gate resistance is reduced to 1/20 of that of conventional WSi-gate MESFETs. The maximum frequency of oscillation and MAG are greatly improved by the reduction of the gate resistance. WSi/TiN/Au gate self-aligned GaAs MESFETs will be useful in future fabrication of high-speed and high-performance microwave and digital devices and their integrated circuits.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1985
- DOI:
- 10.1049/el:19850567
- Bibcode:
- 1985ElL....21..804I
- Keywords:
-
- Annealing;
- Field Effect Transistors;
- Semiconductors (Materials);
- Silicon Compounds;
- Electrical Resistance;
- Fabrication;
- Gates (Circuits);
- Gold;
- Ion Implantation;
- Self Alignment;
- Titanium Nitrides;
- Tungsten Compounds;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering