Improvement of InP MISFET characteristics using infra-red lamp annealing
Abstract
An infrared lamp-annealing technique was employed for postannealing Si ion-implanted InP substrates. The effective electron mobility (mu-eff) of SiO2-InP metal-insulator-semiconductor field-effect transistors fabricated using infrared lamp annealing is remarkably temperature-dependent. The maximum mu-eff is about 11000 sq cm/V-s at 75 K and 1500-2500 sq cm/V-s at room temperature.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1985
- DOI:
- 10.1049/el:19850486
- Bibcode:
- 1985ElL....21..686H
- Keywords:
-
- Annealing;
- Field Effect Transistors;
- Indium Phosphides;
- Mis (Semiconductors);
- Semiconductor Devices;
- Capacitance;
- Electron Density (Concentration);
- Electron Mobility;
- Infrared Radiation;
- Silicon;
- Temperature Dependence;
- Electronics and Electrical Engineering