Degradation mechanisms induced by temperature in power MESFETs
Abstract
Two independent failure mechanisms, mainly induced by temperature, were observed in unpassivated, Au-metallised, commercially available power MESFETs. They result in a high gate/source (drain) leakage and in an increase in the open channel resistance, and may explain the 'burn-out' of the devices in practical applications.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1985
- DOI:
- 10.1049/el:19850423
- Bibcode:
- 1985ElL....21..600C
- Keywords:
-
- Electrical Faults;
- Field Effect Transistors;
- Power Amplifiers;
- Thermal Degradation;
- Electrical Resistance;
- Failure Modes;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering