Subpicosecond base transit time observed in a hot-electron transistor (HET)
Abstract
It has been found that the transverse magnetic field drastically reduces the current gain of an AlGaAs/GaAs hot-electron transistor (HET) at 4.2 K. The result can be understood in terms of the cyclotron motion of hot electrons within the base layer (1000 A thick). Estimated subpicosecond base transit time confirms the quasi-ballistic transport of hot electrons across the base layer of the HET.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1985
- DOI:
- 10.1049/el:19850392
- Bibcode:
- 1985ElL....21..555M
- Keywords:
-
- Electric Current;
- Heterojunction Devices;
- Hot Electrons;
- Magnetic Effects;
- Transistors;
- Transit Time;
- Aluminum Gallium Arsenides;
- Electron Energy;
- Gallium Arsenides;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering