GaInAsP/InP surface emitting laser (wavelength = 1.4 micron, 77 K) with heteromultilayer Bragg reflector
Abstract
Fifty layers of GaInAsP/InP heteromultistructure with one quarter-wavelength thickness have been fabricated by computer-controlled rotational LPE. The measured reflectivity of the Bragg reflector was 82 percent at a wavelength of 1.42 micron. The application of the multilayer as a reflector to a surface-emitting laser is demonstrated and a first GaInAsP/InP surface-emitting laser (wavelength = 1.4 micron) with a heteromultilayer Bragg reflector has been realized. The pulsed threshold current was 120 mA at 77 K and single-wavelength oscillation has been achieved.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1985
- DOI:
- Bibcode:
- 1985ElL....21..303C
- Keywords:
-
- Bragg Angle;
- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Indium Phosphides;
- Infrared Lasers;
- Surface Emitting Lasers;
- Surface Energy;
- Current Density;
- Energy Gaps (Solid State);
- Laser Outputs;
- Multilayer Insulation;
- P-Type Semiconductors;
- Pulsed Lasers;
- Ring Lasers;
- Threshold Currents;
- Lasers and Masers