Improved high-temperature performance of 1.52-micron InGaAsP laser diodes fabricated by two-step VPE and LPE
Abstract
Continuous-wave operation up to 115 C has been achieved in 1.52-micron InGaAsP double-channel planar-buried-heterostructure laser diodes using two-step VPE and LPE. The high-temperature operation has been found attributable to the reduction in the leakage current bypassing the active region.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1985
- DOI:
- Bibcode:
- 1985ElL....21..293K
- Keywords:
-
- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Infrared Lasers;
- Liquid Phase Epitaxy;
- Semiconductor Diodes;
- Vapor Phase Epitaxy;
- Fiber Optics;
- Manufacturing;
- P-N Junctions;
- Solid-Solid Interfaces;
- Temperature Dependence;
- Lasers and Masers